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Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2014.2
  • 页码：-
  • 相关项目：利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
作者： Wei Hong-Yuan|Jiao Chun-Mei|Zhu Qin-Sheng|Wang Zhan-Guo|
同期刊论文项目
利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
期刊论文 25 会议论文 4
同项目期刊论文
Scattering due to large cluster embedded in quantum wells
Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer
Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas
Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor ph
Competitive growth mechanisms of AlN on Si (111) by MOVPE
Numerical study of radial temperature distribution in the AlN sublimation growth system
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlG
Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray pho
Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition
Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wel
Mobility limited by cluster scattering in ternary alloy quantum wires
X-ray probe of GaN thin films grown on InGaN compliant substrates
Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates
Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructu
Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerf
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN
Theoretical study of the anisotropic electrons cattering by step sinvicinal AlGaN/GaN heterostructur
Morphology and compositioncontrolled growth of polar c-axis and nonpolar m-axis well-aligned ternar
Dislocation Scattering in ZnMgO/ZnO Heterostructures
Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer
Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406