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Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer
  • ISSN号：1674-1056
  • 期刊名称：Chin. Phys. B
  • 时间：2015
  • 页码：026802-
  • 相关项目：利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
作者： Wang Lian-Shan(汪连山)|Zhang Qian (张谦)|Meng Xiang-Yue（孟祥岳）|Yang Shao-Yan(杨少延)|
同期刊论文项目
利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
期刊论文 25 会议论文 4
同项目期刊论文
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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406