位置：成果数据库 > 期刊 > 期刊详情页
Morphology and compositioncontrolled growth of polar c-axis and nonpolar m-axis well-aligned ternar
  • ISSN号：2040-3364
  • 期刊名称：Nanoscale
  • 时间：2015
  • 页码：16481–16492-
  • 相关项目：利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
作者： Hongyuan Wei|Lianshan Wang|Zhen Chen|Shaoyan Yang|
同期刊论文项目
利用玻璃衬底制备新型InGaN基量子点全光谱太阳电池材料研究
期刊论文 25 会议论文 4
同项目期刊论文
Scattering due to large cluster embedded in quantum wells
Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer
Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas
Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor ph
Competitive growth mechanisms of AlN on Si (111) by MOVPE
Numerical study of radial temperature distribution in the AlN sublimation growth system
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlG
Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray pho
Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition
Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wel
Mobility limited by cluster scattering in ternary alloy quantum wires
X-ray probe of GaN thin films grown on InGaN compliant substrates
Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates
Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructu
Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerf
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN
Theoretical study of the anisotropic electrons cattering by step sinvicinal AlGaN/GaN heterostructur
Dislocation Scattering in ZnMgO/ZnO Heterostructures
Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer
Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer
Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer