中文摘要：

利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN： Mg薄膜，对不同源流量的GaN：Mg材料特性进行优化研究.研究表明二茂镁（CP2Mg） 和三甲基镓（TMGa）物质的量比（［CP2Mg］/［TMGa］）在1.4×10^-3—2.5×10^-3范围内，随［CP2Mg］/［TMGa］增加，晶体质量提高，空穴浓度线性增加.当［CP2Mg］/［TMGa］为2.5×10^-3时获得空穴浓度与在较高温度生长获得的空穴浓度相当，且薄膜表面较粗糙.采用 ［CP2Mg］/［TMGa］为2.5×10^-3的p型GaN层制备的发光二极管，在注入电流为20 mA时，输出光强提高了17.2％.

英文摘要：

GaN： Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition, the properties of different source flux GaN： Mg materials were studied. When the molar ratio of CP2Mg and TMGa is between 1.4×10^-3 and 2.5×10^-3, the quality of crystal was improved with the increasing molar ration, and the hole concentration was increased linearly. When the molar ratio is 2.5×10^-3,the concentration is equal to that of the film grown at higher temperature, and the surface morphology is more coarser. Taking the p-GaN layer with molar ratio of CP2Mg and TMGa of 2.5×10^-3 as the light-emitting diode, when the inject current is 20 mA, the output light power was increased by 17.2%.