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中文摘要：
在光子晶体垂直腔面发射激光器中采用质子注入工艺,使台面工艺变成纯平面工艺,降低了光子晶体结构制备难度,简化了器件制备,提高了器件的均匀性。质子注入型光子晶体垂直腔面发射激光器中的光子晶体结构,在电流限制孔小于光子晶体缺陷孔时,仍能控制器件光束及模式特性,该结果可用于优化器件阈值电流,制备高性能低阈值电流基横模器件。实验所设计制备的器件,在注入电流小于12.5 m A时,阈值电流2.1 m A,出光功率大于1 m W,远场发射角小于7°,有效验证了光子晶体结构在质子注入型面发射激光器中的光束改善及模式控制作用。
英文摘要：
By introducing the proton implantation（PI） process in the photonic crystal（PhC） vertical-cavity surface-emitting lasers （VCSEL） fabrication to confine the injection current in the devices can make the mesa process become pure plane technology. It reduced the fabrication difficult of the photonic crystal structure, simplified the fabrication processes, and improved the L-I-V characteristics uniformity of the devices. In the PI-PhC-VCSEL, the photonic crystal structure can control light beam and mode characteristics of the devices, when the current injection hole diameter is less than the center defect diameter of the photonic crystal. This effect in the PI-PhC-VCSEL can be used to optimize the threshold current and enhance the performance of the devices; it also can be used to realize high output power low threshold current single fundamental mode PI-PhC-VCSELs. A device with threshold current of 2.1 mA, output power larger than 1 mW, the divergence angle less than 7° was designed and produced. The device can operate with single fundamental mode with the injection current less than 12.5 mA and the effect of the photonic crystal in the PI-VCSEL has been demonstrated.
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