欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
利用金属有机物化学气相淀积（MOCVD）技术在蓝宝石衬底上生长了InGaN∶Mg薄膜,通过改变外延生长温度优化p型InGaN∶Mg表面形貌和电学特性。在800℃,InGaN的空穴浓度为1.9×1019cm-3,电阻率较低,通过原子力显微镜观察到粗化的样品表面有很多圆丘,其均方根粗糙度是所有样品中最高的,综合粗化的表面和优化电学特性的p-InGaN接触层的LED光功率提高23%。
英文摘要：
InGaN∶Mg films have been grown by metal-organic chemical vapor deposition,the surface morphology and electrical properties of the p-InGaN are optimised by changing the epitaxial growth temperature.The sample grown at 800℃ had a lower resistivity than the other samples,hole concentration of the p-InGaN is 1.9×1019cm-3,many knolls for roughen sample surface were observed by atomic force microscopy,its root-mean-square is highest in all samples.The optical power of the LED with roughened surface and optimal electrical properties of p-InGaN contact layer was improved 23%.
同期刊论文项目
同项目期刊论文
期刊信息
位置：