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Phosphorus gettering of precipitated Cu in single crystalline silicon based on rapid thermal process
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：0
  • 页码：3069-3074
  • 相关项目：太阳电池用铸造多晶硅中晶体缺陷的电学复合性能研究
作者： Li, Xiaoqiang|Yang, Deren|Yu, Xuegong|Que, Duanlin|
同期刊论文项目
太阳电池用铸造多晶硅中晶体缺陷的电学复合性能研究
期刊论文 22 会议论文 1
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硅中缺陷对Cu杂质的吸杂