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Suppression of boron-oxygen defects in p-type Czochralski silicon by germanium doping (vol 97, 05190
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：139901-1-3
  • 相关项目：太阳电池用铸造多晶硅中晶体缺陷的电学复合性能研究
作者： Yu, Xuegong|Wang, Peng|Chen, Peng|Li, Xiaoqiang|Yanga, Deren|
同期刊论文项目
太阳电池用铸造多晶硅中晶体缺陷的电学复合性能研究
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Modulation of atomic-layer-deposited Al(2)O(3) film passivation of silicon surface by rapid thermal
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