位置：成果数据库 > 期刊 > 期刊详情页
Formation of shallow junctions in gallium and phosphorus compensated silicon for cell performance im
  • ISSN号：1359-6462
  • 期刊名称：Scripta Materialia
  • 时间：0
  • 页码：871-874
  • 相关项目：太阳电池用铸造多晶硅中晶体缺陷的电学复合性能研究
作者： Chen, Peng|Yu, Xuegong|Chen, Lin|Yang, Deren|
同期刊论文项目
太阳电池用铸造多晶硅中晶体缺陷的电学复合性能研究
期刊论文 22 会议论文 1
同项目期刊论文
Effect of nickel contamination on grain boundary states at a direct silicon bonded (110)/(100) inter
Modulation of 1.5 um dislocation-related luminescence emitted from a direct silicon bonded interface
Germanium-doped crystalline silicon: A new substrate for photovoltaic application
Effect of iron contamination on grain boundary states at a direct silicon bonded (110)/(100) interfa
Suppression of boron-oxygen defects in p-type Czochralski silicon by germanium doping (vol 97, 05190
Phosphorus gettering of precipitated Cu in single crystalline silicon based on rapid thermal process
Modulation of atomic-layer-deposited Al(2)O(3) film passivation of silicon surface by rapid thermal
Improved fracture strength of multicrystalline silicon by germanium doping
Effect of germanium on the kinetics of boron-oxygen defect generation and dissociation in Czochralsk
Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells
Low-cost solar grade silicon purification process with Al-Si system using a powder metallurgy techni
Quantification of characteristic parameters for the dissociation kinetics of iron-boron pairs in Czo
Effect of Au contamination on the electrical characteristics of a "model" small-angle grai
Hydrogen passivation of Fe-related deep energy levels at a direct silicon-bonded (110)/(100) grain b
Efficiency improvement of crystalline silicon solar cells with a back-surface field produced by boro
硅中缺陷对Cu杂质的吸杂