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中文摘要：
采用扫描红外显微镜、光学显微镜、电感耦合等离子质谱仪和微波光电导衰减仪对铜杂质在多晶硅中不同缺陷状态区域的沉淀和吸杂行为进行研究。发现铜杂质沉淀行为与缺陷密度密切相关,在低缺陷密度区域铜杂质大多易于均质形核形成沉淀,而在高缺陷密度区域铜杂质通常会聚集在缺陷处异质形核而沉淀下来。当铜沾污量较高时,由于在硅基体中的肖特基二极管效应,铜沉淀会令多晶硅中的载流子寿命明显缩短。在900℃下进行快速磷吸杂处理后,这两种区域中的铜杂质都不能得到有效去除。
英文摘要：
The precipitation and gettering behaviors of copper （Cu） at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively coupled plasma mass spectrometry and microwave photo-conductance decay. It is found that the behaviors of Cu precipitation are strongly dependent on the defect density. Most of the Cu contaminants tend to form precipitates homogeneously in the low density defect region, while they mostly segregate at the defects and form precipitates heterogeneously in the high density defect region. In the case of heavy contamination, the Cu precipitate can significantly reduce the carrier lifetime of multicrystalline silicon due to their Schottkydiode behavior in the silicon substrate. A 900 °C rap thermal process （RTP） phosphorus gettering anneal cannot be sufficiently effective to remove the Cu precipitates in these two regions.
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