位置：成果数据库 > 期刊 > 期刊详情页
An evidence of defect gettering in GaN
  • 时间：0
  • 相关项目：AlInN材料的MOCVD生长与应用研究
同期刊论文项目
AlInN材料的MOCVD生长与应用研究
期刊论文 36 会议论文 1
同项目期刊论文
Study of lattice damage produced by neon implantation into AlInN
Temperature dependence of absorption edge in MOCVD grown GaN
Effect of annealing on photoluminescence properties of neon implanted GaN
Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemic
Investigation on the structural origin of n-type conductivity in InN films
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响
高阻氮化镓外延层的异常光吸收
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si （111） substrate with AlGaN interlayer
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition
MOCVD生长的GaN薄膜中缺陷团引起的X射线漫散射研究
MOCVD生长的GaN：Mg外延膜的光电性质
InN的光学性质
生长温度对MOCVD外延生长InGaN的影响