中文摘要：

研究了不同生长温度下制备的In0.15Ga0.85As／GaAs应变量子阱的PL谱，结果表明，生长温度越高，In偏析和In-Ga互混越严重，同时，导致更多的In脱附，PL谱发光峰蓝移。对不同In含量的和不同InGaAs厚度的InGaAs／GaAs量子阱进行PL谱测试，分析表明In含量〈0．2，生长温度低于560℃时，In含量和InGaAs层量子阱的厚度对In偏析、脱附和In-Ga互混基本没有影响。

英文摘要：

In the last few years the InGaAs/GaAs heterostructure system has received increasing interest for electronic devices and microwave industries. The strained quantum well （QW） laser has more beneficial effect than other QW lasers. For example, lower threshold current density, wider modulation bandwidth and the emission wavelength of strained QW laser can be adjusted by appropriately changing the strain. With regard to InGaAs/GaAs material system, indium distribution influence on the performances of device directly. Surface segregation of In ions during the growth process is the major factor for the indium distribution in InGaAs/GaAs of InGaAs layer on GaAs substrates is characterized by a strong segregation growth front and substantially modifies the In-composition profile, resulting composition profiles quantized levels are of QW in the growth direction in many semiconductor systems, and consequently, the strongly influenced. The samples of InGaAs/GaAs strained QW are grown in Riber32 compact 21 solid source molecular beam epitaxy （MBE） system equipped with a valved cracker cell for arsenic and reflection high energy electron diffraction （RHEED） for.in situ monitoring of the growth process. Growth temperature is calibrated by infrared pyrometer. The photoluminescence （PL） was studied on InGaAs/GaAs strained QW with various different growth temperature and structure parameters. In ions segregation processes was illustrated based on the Muraki model and the differential calculation were compared with experiment results in detail. The results show that some important information was obtained about the effect of indium segregation, desorption and In-Ga intermixing on optical quality of strained quantum well. The effect is serious, and the peak position of PL is blue shifted with increasing the growth temperature. It is demonstrated that indium segregation and In-Ga intermixing have no effect on the optical properties of InGaAs/GaAs strained quantum well with In content below x =0.2 and the growth tem