中文摘要：

采用固态磷源分子束外延技术在InP（100）衬底上生长了高质量的InP外延材料．实验结果表明InP／InP外延材料的电学性质与诸多生长参数密切相关．根据霍耳测量结果，对生长条件和实验参数进行了优化，在生长温度为370℃，磷裂解温度为850℃，生长速率为0．791）μm／h和束流比为2．5的条件下，获得了厚度为2．35μm的InP／InP外延材料．在77K温度下，电子浓度为1．55×10^-15cm^-3，电子迁移率达到4．57×10^4cm^2／（V·s）．

英文摘要：

The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/（V · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.