在电子器件封装制造和服役过程中,工艺及温度载荷容易引起器件内部界面分层等缺陷,严重影响产品良率和可靠性,及时发现这些内部缺陷十分重要。红外热成像检测技术由于非接触、实时记录、检测速度快、定量分析等特点,已逐渐成为无损检测等领域有效的检测手段。本文采用主动双面红外测量方法对塑封料和铜界面间的缺陷进行检测,得到了试样的表面温度分布与缺陷的尺寸和深度的对应关系。通过试验数据对缺陷深度理论计算方法进行了对比研究,实现了试样内部缺陷特征的定量化识别。
In the packaging manufacture and service process of electronic devices,process and thermal loading facilitate the internal delamination,which seriously degrades the product excellence and reliability.It is very important to timely detect these internal defects.Infrared thermal imaging detection technique has gradually become an effective means of no-destructive testing due to non-contact,real-time recording,rapid test and quantitative analysis etc.The detection of defect located at the interface between molding compound and copper substrate was carried out by active double-sided infrared measurement.The relationship among the sample surface temperature distribution and the defect size and the depth was obtained.By comparing the experimental data with the calculated results from defect depth theory,the quantitative identification of specimen internal defect characteristics is realized.