位置：成果数据库 > 期刊 > 期刊详情页
Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In–Ga–Zn–O TFT Memor
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2013.8.8
  • 页码：1008-1010
  • 相关项目：高密度金属/绝缘体/金属电容的电压系数调制及性能退化机理
作者： Sun Chen|Xing-Mei Cui|Shi-Jin Ding|Qing-Qing Su|Tomas Nyberg|Shi-Li Zhang|Wei Zhang|
同期刊论文项目
高密度金属/绝缘体/金属电容的电压系数调制及性能退化机理
期刊论文 12
同项目期刊论文
Thermal stability of atomic-layer-deposited ultra-thin niobium oxide film on Si (100)
快速热退火对原子层淀积铂纳米颗粒的影响
Pt纳米颗粒辅助化学刻蚀重掺杂p型单晶硅研究
Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage
Formation of cylindrical nanoholes in heavily doped p-type Si(100) substrate via Pt nanoparticles-as
Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
Improvement of Diffusion Barrier Performance of Ru Thin Film by Incorporating a WHfN Underlayer for
Atomic layer deposition of ZnO on thermal SiO2 and Si surfaces using N-2-diluted diethylzinc and H2O
Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precurs