中文摘要：

首先在SiO2/Si衬底上磁控溅射了一层超薄Pt薄膜,并通过快速热退火形成了分离的Pt纳米颗粒阵列。接着研究了在氢氟酸和双氧水的混合溶液中Pt纳米颗粒辅助化学刻蚀重掺杂p型单晶硅片的特性。结果表明,当氢氟酸的浓度为1.06 mol/L时,样品表面分布着许多Pt岛链,在硅衬底表面没有观察到任何孔洞;当氢氟酸的浓度上升到5.3 mol/L时,样品表面起伏不平,出现许多大小不一的小丘,岛链状Pt减少;当氢氟酸的浓度增加到26.5 mol/L时,样品表面出现大量的孔洞,Pt岛链进一步减少。通过对样品的剖面结构进行观察,发现硅衬底中形成了致密的介孔,同时还观察到底部含有Pt岛状物的不规则沟槽,并且介孔的生长速率快于沟槽。最后,对上述实验现象的形成机制进行了讨论。

英文摘要：

Pt nanoiparticle arrays were formed on the SiO2/Si substrate by rapid thermal annealing of ultra-thin Pt film deposited by magnetic sputtering.Subsequently,the Pt nanoparticles assisted chemical etching of the heavily doped p-type monocrystalline silicon wafers was investigated in the solution of HF and H2O2.The experimental results indicate that,when the concentration of HF is 1.06 mol/L,many Pt island-chains are distributed on the sample surface and no pores are observed.When the concentration of HF is increased to 5.3 mol/L,the sample surface became undulated and uneven,and is covered with a lot of irregular silicon hillocks as well as reduced Pt island-chains.When the concentration of HF is increased to 26.5 mol/L,a lot of pores are observed on the sample surface,and Pt island-chains decreased significantly.Based on the cross-section SEM view,dense mesopores are observed in the silicon wafer,and irregular trenches with Pt island at the bottom as well.Moreover,the formation of trenches is slower than that of mesopores.Finally,the underlying mechanism of the aforementioned phenomena were also discussed.