中文摘要：

为了判别大功率半导体激光器是否为静电损毁失效，对大功率半导体激光器进行了静电损毁机制的研究。通过测量和表征大功率半导体激光器静电损毁现象，为判别其失效提供有效判据。首先，对GaAs基980nm大功率半导体激光器（HPLD）分别施加了-200V，-600V，-800V，-1200V以及＋5000V的静电打击（ESD），每次打击后，测量样品电学参数和光学参数。其次，对打击后的器件进行腐蚀并显微观察其打击后损伤现象。反相ESD后，半导体激光器I-V曲线有明显的软击穿现象，在反向4V电压下反向1200V静电打击后漏电为打击的5883854．92倍。正向5000V静电打击后器件没有明显的软击穿现象，且功率下降很小。在反向ESD后器件腐蚀金电极后表面有明显熔毁现象，正向静电打击后则没有此现象。通过正向静电打击和反向静电打击下器件反应的不同I-V特性和损伤表征，推测正向瞬时大电压大电流下，器件的I-V特性无明显变化，而反向大电压大电流打击会导致I-V曲线出现明显软击穿，功率下降和表面熔毁现象，为判别静电损毁提出了有效判据。

英文摘要：

In order to determine the static damage of high power semiconductor laser, the static damage mechanism of high power semiconductor laser is studied. Firstly,the biases of - 200, - 600, - 800, - 1200 and ＋ 5000 V electro- static discharge （ESD） were applied to GaAs -based high power laser diodes. The electrical and optical parameters of HPLD were measured after electrostatic discharge stressing. Secondly, the damage of the device was observed by u- sing a microscope after etching the device. After applying reverse ESD,the I - V curve of the semiconductor laser had a obvious soft breakdown phenomenon and the optical output power decreased obviously. The reverse leakage current of - 1200 V ESD device is 5883854. 92 times of that with no ESD when it was working in 4 V. After applying forward ESD, the device has no obvious soft breakdown phenomenon, and the power drop is very small. After applying reverse ESD and etching gold electrode ,device surface had obvious phenomenon of meltdown,while device surface hadn＇t this phenomenon after applying forward ESD. Due to the different I - V characteristics and damage characterization be- tween reserve ESD and forward ESD, it is inferred that the I - V characteristics of the device has no obvious change af- ter applying the forward high instantaneous voltage and current. But the reverse high instantaneous voltage and current will lead to an obvious soft breakdown of I - V curve and meltdown phenomenon of device surface. This provides an effective criterion for the electrostatic damage.