中文摘要：

研究了以铟锡氧化物（ITO）薄膜作为电流扩展层及出光窗口层的红光LED的漏电增加和抗静电能力下降的问题。结果发现，器件漏电和抗静电能力造成危害的因素并非ITO本身，而是芯片切割过程中侧壁的机械损伤和划片之后ITO颗粒沾污导致的PN结短路。通过化学腐蚀工艺清保芯片切割处的ITO薄膜、切割过程中侧壁的机械损伤痕迹和ITO颗粒的沾污，不仅使带ITO扩展层的LED器件的光提取效率提高了10％以上，抗静电能力提高了1．6倍，而且器件的漏电未受任何影响。

英文摘要：

Aiming at solving the problem of the leakage increasing and the antistatic ability decreasing, which is caused by the indium tin oxide （ITO） applied for the red light LED as current spreading layer and window layer,the manufacture process of the LED device is studied step by step. The ITO current spreading layer isnrt harm to the devicels leakage ability or antistatic ability, but the mechanical damage caused by the chip cutting and the short circuit of PN junction contamination with ITO particle are the reasons. The mechanical damage during the chip cutting and the ITO particle contamination can be avoided by chemically etching the ITO layer in the cutting position and then etching it over the PN junction. Compared with the traditional LED,the new type of LED with ITO current spreading layer is prepared in new processes. The light extraction efficiency increases by about 10 % the antistatic ability increases by about 1.6 times and the leakage ability is not affected.