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中文摘要：
利用金属有机物化学气相沉积（MOCVD）技术在蓝宝石衬底上制备了Ga N∶C薄膜。为得到高阻（或半绝缘）的Ga N薄膜,研究了源（CCl4）流量和载气对MOCVD外延Ga N薄膜电学性能的影响,发现CCl4流量和载气对实现高阻的Ga N影响很大。当Ga N缓冲层采用N2作为载气,CCl4的流量为0.016μmol/min时成功实现了Ga N的高阻生长,样品A2的方块电阻高达2.8×107Ω/sq。经原子力显微镜（AFM）测试显示,样品的表面形貌较好,粗糙度均在0.3 nm附近,说明C掺杂对外延Ga N薄膜的表面形貌没有大的影响。低温荧光光谱测试显示黄光峰与刃型位错有关。
英文摘要：
GaN ： C films are grown on sapphire by metal-organic chemical vapor deposition （MOCVD） with different cam＇ier gas and different CCI4 source flux. To get a high resistance （or semi-insulating） GaN, the electrical properties of GaN films influenced by CC14 flux and carrier gas are investigated. The results show that the CCL flux and carrier gas influence the growth of high resistance GaN greatly. The sample A2 gets the highest sheet resistance （2.8 × 107Ω/sq） with the CC14 flux of 0.016μmol/min and N2 used as the carrier gas. The atomic force microscope （AFM） test show that the samples have a flat surface morphology, the roughness is around 0.3 nm. Meanwhile, it also show that the doping C has little influence on the surface morphology. The low temperature photoluminescence （LTPL） test show that the yellow luminescence is related with edge dislocation.
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