中文摘要：

利用透射电镜对掺氮（NCZ）和普通（CZ）直拉硅单晶中的原生氧沉淀进行研究．研究表明，在NCZ样品中，有高密度的粒径为5nm的氧沉淀生成，而在CZ样品中，没有观察到这种氧沉淀．初步认为，这种细小的氧沉淀是以650℃低温下形成的N-0复合体为核心在随后的冷却过程中形成．

英文摘要：

The grown-in oxygen precipitates in conventional Czochralski （CZ） silicon and nitrogen-doped Czochralski （NCZ） silicon have been investigated by means of transmission electron microscopy （TEM）. Tiny oxygen precipitates about 5 nm in size were observed in the NCZ specimens. It is believed that the oxygen precipitates may have grown from the heterogeneous nuclei of nitrogen-related complexes formed at a low temperature of 650℃.