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Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations sca
ISSN号:0003-6951
期刊名称:Applied Physics Letters
时间:2012.4.4
页码:-
相关项目:大尺寸GaN厚膜衬底材料自剥离制备研究
作者:
Wang, Zhanguo|Wu, Ju|Lu, Yanwu|Zhao, Guijuan|Gu, Chengyan|Liu, Changbo|Sang, Ling|Yang, Shaoyan|Liu, Xianglin|
同期刊论文项目
大尺寸GaN厚膜衬底材料自剥离制备研究
期刊论文 13
专利 4
同项目期刊论文
Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire
Mobility limited by cluster scattering in ternary alloy quantum wires
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
A Theoretical Calculation of the Impact of GaN Cap and AlxGa1-xN Barrier Thickness Fluctuations on T
Strain Distributions in Non-Polar a-Plane InxGa1-xN Epitaxial Layers on r-Plane Sapphire Extracted f
Design of a three-layer hot-wall horizontal flow MOCVD reactor
外电场下不对称阶梯型量子阱的等离激元特性
Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer