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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2011.3.3
  • 页码：114-117
  • 相关项目：大尺寸GaN厚膜衬底材料自剥离制备研究
作者： Wang, Zhanguo|Song, Huaping|Wang, Jun|Jia, Caihong|Liu, Jianming|Xu, Xiaoqing|Liu, Xianglin|Yang, Shaoyan|Zhu, Qinsheng|
同期刊论文项目
大尺寸GaN厚膜衬底材料自剥离制备研究
期刊论文 13 专利 4
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