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A Theoretical Calculation of the Impact of GaN Cap and AlxGa1-xN Barrier Thickness Fluctuations on T
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2011.12.12
  • 页码：4272-4275
  • 相关项目：大尺寸GaN厚膜衬底材料自剥离制备研究
作者： Wang, Zhanguo|Wu, Ju|Lu, Yanwu|Zhang, Biao|Li, Chengming|Sang, Ling|Song, Yafeng|Shi, Kai|Liu, Xianglin|
同期刊论文项目
大尺寸GaN厚膜衬底材料自剥离制备研究
期刊论文 13 专利 4
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