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Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitti
ISSN号:0947-8396
期刊名称:Applied Physics A-Materials Science & Processi
时间:2012.9.9
页码:771-776
相关项目:InGaN调制量子阱结构和性质
作者:
Lee, Yueh-Chien|Wang, Lei|Lu, Cimang|Li, Ding|Liu, Ningyang|Li, Lei|Yang, Wei|Cao, Wenyu|Chen, Weihua|
同期刊论文项目
InGaN调制量子阱结构和性质
期刊论文 26
会议论文 1
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