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Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum w
ISSN号:1674-1056
期刊名称:Chinese Physics B
时间:2013.7.7
页码:-
相关项目:InGaN调制量子阱结构和性质
作者:
Cao Wen-Yu|He Yong-Fa|Chen Zhao|Yang Wei|Du Wei-Min|Hu Xiao-Dong|
同期刊论文项目
InGaN调制量子阱结构和性质
期刊论文 26
会议论文 1
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InGaN/GaN多量子阱蓝光发光二极管老化过程中的光谱特性
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Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations
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Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a hig
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The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/Ga
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期刊信息
《中国物理B:英文版》
中国科技核心期刊
主管单位:中国科学院
主办单位:中国物理学会和中国科学院物理研究所
主编:欧阳钟灿
地址:北京 中关村 中国科学院物理研究所内
邮编:100080
邮箱:
电话:010-82649026 82649519
国际标准刊号:ISSN:1674-1056
国内统一刊号:ISSN:11-5639/O4
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被引量:406