中文摘要：

本文采用MIS电容结构,结合10keVX射线辐照试验,研究了HfON和HfO2介电薄膜的总剂量抗辐射性能。研究结果表明,在0—30kGy(Si)的辐照总剂量下,以HfON薄膜为绝缘层的MIS结构的平带电压漂移均远低于HfO2MIS电容结构。从微观角度探讨了氮元素对改进高k铪基介电薄膜总剂量抗辐射性能的作用机理。

英文摘要：

Total-dose irradiation responses of HfON and HfO2 dielectric films were studied with their MIS structures and under 10keV X-rays. The flatband voltage shifts of HfON MIS structures are much smaller than HfO2 MIS structures under different total-doses up to 30 kGy(Si). The influence of the added nitrogen element on total-dose irradiation tolerance of Hf-based dielectric films was also discussed.