中文摘要：

利用超高真空电子束蒸发法制备了可替代SiO2作为栅介质的HfAlO膜。薄膜的化学组成为（HfO2）（Al2O3）2，900℃退火处理后仍然呈现非晶状态，而且表面平滑。介电常数为12．7，等效氧化物厚度2nm，固定电荷密度4×10^12cm^-2，2V栅偏压下漏电流为0．04mA／cm^2。后退火处理能有效降低固定电荷密度和泄漏电流密度，但会造成界面SiO2的生长。

英文摘要：

Hfoaluminate films, a potential replacement for SiO2 as gate dielectrics, were deposited on Si substrate by ultra-vacuum electron beam evaporation （EB-PVD） method. The film with a chemical composition of （HfO2）（Al2O3）2, remained amorphous even after post annealing treatment at 900℃, presenting good electrical performances including a dielectric constant of 12.7, an equivalent oxide thickness of 2 nm, a fixed charge density of 4×10^12 cm^-2, and a leakage current density of 0.04 mA/cm^2 at the gate bias of 2V. Post annealing treatment could reduce the leakage current and the fixed charge density effectively, but made the film surface rough and increased equivalent oxide thickness.