中文摘要：

主要研究了利用恒电流电化学技术制备CaMoO4薄膜的工艺中，电流密度和村底处理方式对薄膜制备的影响。研究发现，增大阳极氧化电流密度会加快薄膜的生长速度，但会加剧晶粒团簇生长的趋势、减弱薄膜与村底的附着力和薄膜的均匀性；村底的不同处理方式对薄膜晶粒的生长速度、沉积方式、均匀性等有较大的影响，在抛光村底上薄膜的沉积速度比酸腐蚀和粗磨的村底要快，且不易造成晶粒的团簇生长。结果表明，CaMoO4薄膜的电化学沉积，应在抛光村底上进行；电流密度控制在0．5mA／em^2附近比较好。

英文摘要：

The influence of current density and pre-treatment of substrates on the formation of CaMoO4 thin films prepared by electrochemical technique under constant current density conditions was studied. The results reveal that when the anode oxidation current density is enlarged,the growth speed of CaMoO4 thin films will be accelerated; whereas the cluster growing trend of CaMoO4 grains will be aggravated,and the adhesive force and uniformity of as-prepared thin films would be weakened. The different pre-treatment ways of the substrates have great impact on the growth speed of grains, depositing ways as well as the uniformity of the as-prepared CaMoO4. Furthermore, the depositing speed of CaMoO4 thin films on the substrate mechanically polished is much faster than that on substrates roughly grinded or polished by using the mixture acids,and the deposition of CaMoO4 thin films on the substrate mechanically polished will hardly leads to the growth of cluster grains. The results indicate that the optimized electrochemical deposit condition for CaMoO4 films is the current density about 0.5mA/cm^2 deposited on the substrates polished mechanically.