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A low active and leakage power SRAM using a read and write divided and bist programmable timing cont
  • ISSN号：0026-2692
  • 期刊名称：Microelectronics Journal
  • 时间：2013.4
  • 页码：283-291
  • 相关项目：高密度高可靠性亚阈值静态存储器的理论研究
作者： [2]. Jiafeng Zhu, Na Bai, Jianhui Wu|
同期刊论文项目
高密度高可靠性亚阈值静态存储器的理论研究
期刊论文 23 会议论文 8
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