中文摘要：

针对纳米定位平台的构型和定位精度问题，采用体硅加工技术成功地研制了一种基于单晶硅并带有位移检测功能的新型二自由度纳米级定位平台。介绍了定位平台的相关制作工艺，并对关键工艺进行了分析，总结了导致器件失效的主要原因，探讨了减少失效的方法。同时，提出了一种可行的面内侧面压阻加工方法。通过对深度反应离子刻蚀（DRIE）工艺参数的调整，成功地刻蚀出大尺寸、大深宽比的结构释放窗口，释放了最小线宽为2．5μm，厚度为50μm的梳齿结构。

英文摘要：

In order to realize the miniaturized nano-positioning stage, a novel 2-DOF Single Crystal Silicon （SCS） nano-positioning micro x-y stage with the function of displacement detection was successfully developed using silicon bulk machining. The fabrication process of the nano-positioning stage with high aspect ratio and big dimension was presented. The effects of Deep Reactive Ion Etching （DRIE） and the backside protecting under the etching silicon on the structure were analyzed. Some factors causing nano-position stage failure were identified, and several advices were provided for avoiding these failures. Moreover, an effective fabricating technique was proposed to fabricate a vertical sidewall piezoresistor in plane in this nano-positioning stage. By adjusting DRIE parameters, a backside window with high aspect ratio and big dimension for releasing the structure was etched and elec- trostatics comb structure of 2.5/μm wide and 50μm thickness was successfully released. Experimental results show the nano-positioning stata with high aspect ratio has excellent performance in integrating displacement detection.