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Grown-in defects in heavily phosphorus-doped Czochralski silicon
  • ISSN号：0921-4526
  • 期刊名称：Physica B-Condensed Matter
  • 时间：0
  • 页码：4619-4621
  • 语言：英文
  • 相关项目：重掺磷直拉硅单晶的微缺陷研究
作者： Zeng, Yuheng|Chen, Jiahe|Zeng, Zhidan|Yang, Deren|Ma, Xiangyang|
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重掺磷直拉硅单晶的微缺陷研究
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