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Oxygen precipitation in heavily phosphorus-doped Czochralski silicon: Effect of nitrogen codoping
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：0
  • 页码：198-205
  • 语言：英文
  • 相关项目：重掺磷直拉硅单晶的微缺陷研究
作者： 杨德仁|
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