位置：成果数据库 > 期刊 > 期刊详情页
A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafers
  • ISSN号：1369-8001
  • 期刊名称：Materials Science in Semiconductor Processing
  • 时间：0
  • 页码：131-136
  • 语言：英文
  • 相关项目：重掺磷直拉硅单晶的微缺陷研究
作者： Que, Duanlin|Zeng, Zhidan|Tian, Daxi|Gong, Longfei|Ma, Xiangyang|Yang, Deren|Li, Liben|Zeng, Yuheng|
同期刊论文项目
重掺磷直拉硅单晶的微缺陷研究
期刊论文 7 会议论文 2 专利 1
同项目期刊论文
Effects of heavy phosphorus-doping on mechanical properties of Czochralski silicon
Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochra
Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phospho
Grown-in defects in heavily phosphorus-doped Czochralski silicon
Oxygen precipitation in heavily phosphorus-doped Czochralski silicon: Effect of nitrogen codoping
Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures