位置：成果数据库 > 期刊 > 期刊详情页
Effects of heavy phosphorus-doping on mechanical properties of Czochralski silicon
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：166-171
  • 语言：英文
  • 相关项目：重掺磷直拉硅单晶的微缺陷研究
作者： Liu, Yonggang|Yang, Deren|Chen, Jiahe|Zeng, Zhidan|Zeng, Yuheng|Ma, Xiangyang|
同期刊论文项目
重掺磷直拉硅单晶的微缺陷研究
期刊论文 7 会议论文 2 专利 1
同项目期刊论文
A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafers
Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochra
Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phospho
Grown-in defects in heavily phosphorus-doped Czochralski silicon
Oxygen precipitation in heavily phosphorus-doped Czochralski silicon: Effect of nitrogen codoping
Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures