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The conductive path in HfO2: first principles study
  • 期刊名称：Chinese Journal of Semiconductors
  • 时间：2012.7.7
  • 页码：7-10
  • 分类：TP277[自动化与计算机技术—控制科学与工程;自动化与计算机技术—检测技术与自动化装置] TQ333.93[化学工程—橡胶工业]
  • 作者机构：[1]Institute of Electronic and Information Project, Anhui University, Hefei 230601, China, [2]Laboratory of Nano-Fabrication and Novel Device Integrated Technology, Institute of Microelectronics, Chinese Academyof Sciences, Beijing 100029, China
  • 相关基金：Project supported by the National Youth Science Foundation, China （No. 61006064）.
  • 相关项目：纳米CMOS器件统一模型模拟理论及性能优化方案的研究
作者： Zhou Maoxiu|Dai Yuehua|
关键词： 导电通路, 路径, 第一原理, 氧化铪, 密度泛函理论, 计算模拟, 计算结果, 维也纳, resistance switching mechanism, DFT, conductive path, lattice orientation
中文摘要：

Corresponding author. Email： daiyuehua2000@yahoo.com.cn

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纳米CMOS器件统一模型模拟理论及性能优化方案的研究
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