中文摘要：

根据电路和热路的基本原理结合硅通孔（TSV）的几何结构,建立TSV互连结构等效电路模型,对该模型进行电-热耦合条件下的互连传输性能分析,研究TSV的半径、高度和二氧化硅层厚度对TSV传输性能的影响。结果表明,TSV互连结构的传输性能随着半径和二氧化硅层厚度的增大而变得越好,随着其高度增大而变得越差。同时用COMSOL仿真软件分析出的S参数与等效电路模型的结果相对比,所得的结果几乎一样,进一步说明等效电路模型的正确性。

英文摘要：

In combination with the fundamental of the circuit and heat circuit, and geometry structure of the TSV （through silicon via）, the equivalent circuit model of the TSV interconnection structure was established. The interconnection transmission performance of the model under the electrothermal coupling condition is analyzed. The influence of the radius, height and sili- con dioxide layer＇s thickness of the TSV on the TSV transmission performance is studied. The study results show that the trans- mission performance of the TSV interconnection structure becomes high with the increase of the radius and silicon dioxide layer＇s thickness of the TSV, and becomes poor with the increase of the height of the TSV. The S-parameter analyzed with the COMSOL simulation software is compared with the result obtained with the equivalent circuit model. The two results are almost the same, which prove that the equivalent circuit model is correct.