中文摘要：

随着集成电路复杂度的提高以及半导体制造工艺水平的不断发展,硅通孔（Through Silicon Via）TSV技术成为三维集成电路的一种主流互连技术,建立单个TSV的三维物理模型,通过回波损耗来分析不同物理参数和尺寸变化对信号传输性能的影响;利用硅通孔的参数提取模型对其进行RLC参数的提取,并建立等效的电路模型和故障电路模型.扫描频率在10GHz范围内,利用故障电路末端电压来分析故障的大小,同时通过最小二乘法拟合一条根植电压曲线来判断故障大小.

英文摘要：

With the increasing complexity of IC and the development of the semiconductor manufacturing process,through silicon via（TSV）has become a main interconnect technology for 3D-IC.3Dphysical model of single TSV is built to analyze the effect of different physical parameter and changing size on the performance of signal transmission by return loss.The parameter extraction model of TSV is adopted to obtain the parameter of RLC.Furthermore,both the equivalent circuit model and the fault circuit model are established.The value of the crack is determined by the changing terminal voltage of the fault circuit in the frequency range of 10 GHz.At the same time,the curve on judging the value of crack is estimated with the least square method.