位置：成果数据库 > 期刊 > 期刊详情页
带有HK介质条的超低阻超结DMOS
  • 期刊名称：Electron Device Letters, IEEE
  • 时间：0
  • 页码：42-44
  • 相关项目：新型低k介质埋层SOI功率器件耐压理论与新结构
作者： 罗小蓉|
同期刊论文项目
新型低k介质埋层SOI功率器件耐压理论与新结构
期刊论文 34 会议论文 4 专利 5
同项目期刊论文
A low on-resistance SOI LDMOS using a trench gate and a recessed drain
Low on-resistance triple RESURF SOI LDMOS with an Integration of a planar gate and trench gate
Double gate lateral IGBT on partial membrane
High voltage SOI LDMOS with a compound buried layer
Universal trench design method for a high-voltage SOI trench LDMOS
Analytical models for the electric field distributions and breakdown voltage of Triple RESURF SOI LD
Conductivity modulation enhanced lateral IGBT with SiO_2 shielded layer anode by SIMOX technology on SOI substrate
Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS
Analytical model for high-voltage SOI device with composite-k dielectric buried layer
Complementary charge islands structure for a high voltage device of partial-SOI
Novel SOI double-gate MOSFET with a P-type buried layer
A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer
Ultra-low specific on-resistance SOI double-gate trench-type MOSFET