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Double gate lateral IGBT on partial membrane
  • 期刊名称：半导体学报
  • 时间：0
  • 页码：7-10
  • 语言：中文
  • 分类：TN432.03[电子电信—微电子学与固体电子学] TN322.8[电子电信—物理电子学]
  • 作者机构：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Nos. 60806025, 60976060） and the Youth Teacher Foundation of University of Electronic Science and Technology of China （No. jx0721）, Acknowledgement The authors would like to thank other members of the SOI team for their helpful discussion.
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： 张波|罗小蓉|雷磊|张伟|李肇基|
关键词： LIGBT, 绝缘栅双极晶体管, 膜, 双门, 通态电阻, 快速开关, 击穿电压, 开关速度, SOI, LIGBT, on-resistance, breakdown voltage, switching speed
中文摘要：

Corresponding author. Email： xrluo@uestc.edu.cn

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