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Low on-resistance triple RESURF SOI LDMOS with an Integration of a planar gate and trench gate
  • 期刊名称：Chinese Physics B
  • 时间：0
  • 页码：11-13
  • 相关项目：新型低k介质埋层SOI功率器件耐压理论与新结构
作者： Luo Xiao-rong, Yao Guo-liang, Wang Yuan-gang, Zhan|
同期刊论文项目
新型低k介质埋层SOI功率器件耐压理论与新结构
期刊论文 34 会议论文 4 专利 5
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