中文摘要：

An ultra-low specific on-resistance(Ron,sp) integrated silicon-on-insulator（SOI） double-gate triple RESURF（reduced surface field） n-type MOSFET（DG T-RESURF） is proposed.The MOSFET features two structures: an integrated double gates structure（DG） that combines a planar gate with an extended trench gate,and a p-type buried layer（BP） in the n-type drift region.First,the DG forms dual conduction channels and shortens the forward current path,so reducing Ron,sp.The DG works as a vertical field plate to improve the breakdown voltage （BV） characteristics.Second,the BP forms a triple RESURF structure（T-RESURF）,which not only increases the drift doping concentration but also modulates the electric field.This results in a reduced Ron,sp and an improved BV.Third,the extended trench gate and the BP linked with the p-body region reduce the sensitivity of the BV to position of the BP.The BV of 325 V and Ron,sp of 8.6 mΩ·cm2 are obtained for the DG T-RESURF by simulation. Ron,sp of DG T-RESURF is decreased by 63.4%in comparison with a planar-gate single RESURF MOSFET（PG S-RESURF）,and the BV is increased by 9.8%.

英文摘要：

An ultra-low specific on-resistance（R_（on,sp）） integrated silicon-on-insulator（SOI） double-gate triple RESURF（reduced surface field） n-type MOSFET（DG T-RESURF） is proposed.The MOSFET features two structures： an integrated double gates structure（DG） that combines a planar gate with an extended trench gate,and a p-type buried layer（BP） in the n-type drift region.First,the DG forms dual conduction channels and shortens the forward current path,so reducing R_（on,sp）.The DG works as a vertical field plate to improve the breakdown voltage （BV） characteristics.Second,the BP forms a triple RESURF structure（T-RESURF）,which not only increases the drift doping concentration but also modulates the electric field.This results in a reduced R_（on,sp） and an improved BV.Third,the extended trench gate and the BP linked with the p-body region reduce the sensitivity of the BV to position of the BP.The BV of 325 V and R_（on,sp） of 8.6 mΩ·cm~2 are obtained for the DG T-RESURF by simulation. R_（on,sp） of DG T-RESURF is decreased by 63.4%in comparison with a planar-gate single RESURF MOSFET（PG S-RESURF）,and the BV is increased by 9.8%.