中文摘要：

通过高温固相法在还原气体保护下合成Ba4（SiaO8）2：Eu2＋，Prf3＋样品及一系列参比样品．分别利用两种模式测得光致发光与余辉光谱．结果显示：光致发光与余辉的发光中心均是Eu2．卜离子；共掺Pr3＋在基质中引入新的俘获载流子的缺陷．热释光与余辉衰减测试表明，与单掺Eu2＋所形成的陷阱深度相比，共掺pr3＋导致余辉强度增强是归因于：在浅陷阱区（T1区）的陷阱深度变得更浅．而余辉时间增长是归因于：在深陷阱区（T2区1深陷阱密度大幅度减少．同时发现在不同激发波长下激发，余辉机理中的激发路径归结于以下两种过程．其一：268nm激发时，是基质中的电子被直接激发至陷阱．其二：330nm或365nm激发时，电子从Eu2＋基态激发至激发态．随后部分电子通过导带运输被陷阱中心所俘获．因此，余辉强度的不同归结为以上两种载流子俘获路径的不同．

英文摘要：

A bluish-green long persistent luminescence material Ba4（Si3Os）2：Eu2＋, Pr3＋, was synthesized by traditional solid state method in a reductive atmosphere According to the photoluminescence and afterglow spectra measurement, the emission center is the cation Eu2＋ in the photoluminescence and afterglow procedure. The Pr3＋ co-doped sample forms new defects which could capture current carriers after excitation. On the basis of thermoluminescence and afterglow decay measurement, the afterglow intensity of Pra＋ co-doped sample sharply enhances as compared with Eu2＋ doped one, the reason is that the lower depth traps are generated in the shallow trap areas （T1 region）. At the same time, the Pr3＋ co-doped sample have longer afterglow decay than that doped with only Eu2＋; the reason is that the deep traps concentration decreases in the deep trap areas （T2 region）. The afterglow mechanism of Pra＋ co-doped sample have two of different excitation paths, path 1： the electron of the host is directly projected to traops at 268 nm excitation; path 2： the electron of the Eu2＋ corresponds to the transitions from the ground state to the 5d excited state at 330 nm excitation. Then the different afterglow mechanism of phosphor was produced.