中文摘要：

通过高温固相法制备出Sr0.98-xAl2O4∶0.02Eu^2＋,xTm^3＋（x=0,0.01,0.02,0.03,0.04,0.05）系列样品,并对其光激励和热释光性能进行了研究。在Sr Al2O4∶Eu2＋原有陷阱能级结构的基础上,通过Tm3＋的掺杂引入了更深的陷阱TB,并增加原有陷阱TA浓度,进而优化了材料的光存储容量及光激励特性。对比研究了系列样品的初始光激励发光强度和热释光强度随着Tm^3＋掺杂量的变化规律,证实陷阱TB为光激励发光提供了有效俘获中心。当Tm^3＋的掺杂摩尔分数x=0.03时,材料中的陷阱TB的浓度达到最高值,同时光激励发光强度最大。对比Tm^3＋共掺前后热释光图谱,通过Chen’s半宽法计算出了引入陷阱TB的陷阱深度。实验结果证实材料中TB的浓度对其光激励发光性能起着决定性的作用。在980 nm激发下,由深陷阱TB释放出来的电子可以再次被浅陷阱TA俘获,这种浅陷阱TA的再俘获效应在光激励发光过程中表现为光激励余辉现象。

英文摘要：

A series of electron capture materials Sr0.98-xAl2O4∶0. 02Eu^2＋,xTm^3＋（x =0, 0. 01, 0. 02, 0. 03, 0. 04, 0. 05） were synthesized by a conventional solid-state reaction method. The dee-per new trap （ TB ） was introduced into the SrAl2 O4∶Eu2＋phosphor lattice by the co-dopant of Tm^3＋ions to optimize the properties of the ETM phosphor. Meanwhile, the trap concentration of intrinsic shallow trap （ TA ） was increased. The properties of photo-stimulated luminescence （ PSL） and ther-moluminescence （ TL） in the series samples were investigated. It is found that TB is responsible for the performance of PSL. The most efficient initial PSL can be obtained when the co-doping mole fraction of Tm^3＋ is 0. 03, which keeps the correspondence with the strongest TL intensity of TB. Be-sides, the phosphors show a PSL afterglow under 980 nm stimulation, which can be ascribed to the retrapping of TA as the electrons firstly excited from TB will be re-trapped by the empty TA to generate the PSL afterglow.