中文摘要：

通过高温固相法制备出系列电子俘获型材料Sr3 SiO5∶Eu^2＋，RE^3＋（RE＝ Nd^3＋，Ho^3＋，La^3＋），并对其光激励和长余辉性能进行了研究。经过紫外光源激发后，利用980 nm激光照射时，表现出很强的上转换光激励信息读出响应，其归因于较深陷阱（438 K）的存在，这种性能在Sr3 SiO5∶Eu^2＋，La^3＋和Sr3 SiO5∶Eu^2＋，Ho^3＋两种材料表现尤为明显。随后，对陷阱的深度和载流子浓度进行了研究，并分析产生光激励性能的原因。热释光光谱中电子俘获参数的计算是通过Chen’s 半宽方法，得出438 K 所对应的陷阱深度值，并与980 nm激光辐照光源的能量形成对比。与此同时，共掺稀土离子后的余辉性能也有着较大幅度的提高，Sr3 SiO5∶Eu^2＋，La^3＋的余辉时间更是达到12 h以上。研究结果显示，共掺样品的陷阱结构的改变是导致其光激励及余辉性能的根本原因。

英文摘要：

A series of electron capture materials Sr3 SiO5∶Eu^2＋,RE^3＋（RE= Nd^3＋,Ho^3＋,La^3＋）were prepared by high tem-perature solid state method.The photo-stimulated luminescence （PSL）and long afterglow performance were evaluated.After excited by UV light,it showed a strong up-conversion photo-stimulated read-out response when stimulated by 980 nm laser, which is attributed to the existence of deep traps （438 K）.This property was especially shown in Sr3 SiO5∶Eu^2＋,La^3＋and Sr3 SiO5∶Eu^2＋,Ho^3＋.Subsequently,the trapping depth and carrier concentration were studied.In this way,we verified the cause of PSL.The calculation of parameters of trapping electron in the thermoluminescence spectrum is through the method of Chen＇s half width,getting the value of trapping depth under the temperature of 438 K,which contrasts to the energy of 980 nm laser radiation.At the same time,the afterglow performance after co-doping with rare earth ion was greatly improved.The af-terglow time of Sr3 SiO5∶Eu^2＋,La^3＋is up to 12 hours.Research results show that the change in mixed trap structure is the pri-mary cause of photo-stimulated and long persistent luminescence properties.