中文摘要：

为有效控制SiC／Al复合材料制备过程中的界面反应，分析了SiC／Al复合材料可能发生的界面反应，并基于Gibbs-Helmhohz方程式和化学反应的热力学平衡条件，应用基本热力学数据，计算了反应标准Gibbs自由能随温度的变化值．根据化学平衡理论，进一步分析了在界面上生成的Al4C3和MgAl2O4的热力学稳定性．结果表明：当界面上硅活度大于某一临界值A^0 Si时，界面上不能生成稳定的Al4C3，且A^0 Si随温度的升高而下降，在1000K时有一个跳跃；A^0 Si界面上生成MgAl2O4的反应过程以及生成物的比例，受界面Mg、Al活度的影响较大，存在临界A^0 Mg,A^0 Al和A^1 Al值，且这些值随温度的升高而升高．

英文摘要：

To control the interface reactions of SiC/A1 composites effectively during preparation, the paper summarized the possible interface reactions. Based on Gibbs-Helmholtz equation and thermodynamic equilibrium of chemical reactions, used the basic thermodynamic data, the paper also calculated the variable Gibbs free energy of the reactions under the different temperature. And used the equilibrium theory of chemical reactions, the thermodynamic stability of Al4C3 and MgAl2O4 produced on interface was analyzed. The results showed that when the activing of Si on interface become higher than one critical value of A^0 Si, there is not stable Al4C3 produced, and the value of A^0 Si would drop, as the temperature increase. When the temperature is up to 1 000K, the value of A^0 Si have a jump. The reactions process of MgAl2O4 produced on interface and proportion of resultant can be influenced by the activation of Mg and Al. And the critical value of A^0 Mg and A^0 Al will A^1 Al with temperature increasing.