采用提拉法生长了尺寸为 35mm×35mm×50mm 的透明 Ba2TiSi2O8晶体。XRD 结果表明所得晶体的物相为 Ba2TiSi2O8单晶,浮力法测量晶体的密度为 4.465g/cm3。利用静电容法测量 Ba2TiSi2O8晶体的相对介电常数为 ε11/ε0= 16.35 和 ε33/ε0= 12.38。干涉法测量的压电常数为 d15= 17.55 pC/N、d31= –1.49 pC/N,谐振法测量的机电耦合系数为 k33= 10%,弹性常数 sE11= 7.5 × 10–12、sE33= 13.3 × 10–12、sE44= 33.6 × 10–12m2/N 和 sE66= 12.8 × 10–12m2/N。并测量了 Ba2TiSi2O8晶体的电阻率为 pa= 9.43 × 1013 ·cm、pc= 5.84 × 1013 cm。通过测量发现,Ba2TiSi2O8晶体压电常数远大于石英的,且具有大的机电耦合系数和较大的电阻率,是一种优良的压电晶体材料。
Ba2TiSi2O8 crystals (the size: 35 mm× 35 mm× 50 mm) were grown by the Czochralski method. The results by X-ray dif- fraction indicated that the as-grown crystals composed of Ba2TiSi2O8 single phase. The density of Ba2TiSi2O8 measured by buoyancy method was 4.465 g/cm3. The relative dielectric constants of Ba2TiSi2O8 crystal determined through an electrostatic capacitive method were ε11/ε0 = 16.35 and ε33/ε0 = 12.38. The piezoelectric constants (i.e., d15 = 17.55 pC/N and d31 =-1.49 pC/N) were measured by an interference method. The eleetromechanical coupling coefficients (i.e., k33= 10%) and elastic constants (i.e., S11^E =7.5×10^-12m^2/N, S33^E= e 13.3×10^-12 m^2/N, S44^E = 33.6×10^-12 m^2/N, and s 66 = 12.8×10^-12 m^2/N) were obtained by a resonance technique. The electrical resistivi- ties (i.e., Pa = 9.43×10^13 Ω·cm and Pc = 5.84×10^13 Ω·cm) were also determined. It is found that the piezoelectric constant of Ba2TiSi2O8 crystal is greater than that of quartz. In addition, the Ba2TiSi2O8 crystal possesses a greater electromechanical coupling coefficient and a greater electrical resistivity. This Ba2TiSi2O8 crystal could be used as a superior piezoelectric crystalline material.