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Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes*
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  • 相关项目：大注入条件下高发光效率GaN基LED有源区结构研究
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大注入条件下高发光效率GaN基LED有源区结构研究
期刊论文 19 会议论文 1
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Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H(3)PO(4)
激光剥离转移衬底的薄膜GaN 基LED 器件特性分析*
Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction *
Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetr
GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumin
Light transmission from the large-area highly ordered epoxy conical pillar arrays and application to
Size effect on efficiency droop of blue light emitting diode*
Formation of low-resistance and thermally stable Ohmic contacts to LLO prepared N-polar n-GaN*
采用AlGaN /GaN 阻挡层的大功率InGaN /GaN MQWs 蓝光LED*
Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the
Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal or
Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy*
Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate*
GaN基微米LED大注入条件下发光特性研究
采用AlGaN/GaN阻挡层的大功率InGaN/GaN MQWs蓝光LED
GaN-based substrates and optoelectronic materials and devices
Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN templateQuasi-homoepitaxial GaN-based blue light emitting diode on thick GaN templateQuasi-homoepitaxial GaN-based blue light emitting diode on thick GaN templateQuasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template