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Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy*
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  • 相关项目：大注入条件下高发光效率GaN基LED有源区结构研究
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大注入条件下高发光效率GaN基LED有源区结构研究
期刊论文 19 会议论文 1
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Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H(3)PO(4)
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Size effect on efficiency droop of blue light emitting diode*
Formation of low-resistance and thermally stable Ohmic contacts to LLO prepared N-polar n-GaN*
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Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the
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GaN基微米LED大注入条件下发光特性研究
采用AlGaN/GaN阻挡层的大功率InGaN/GaN MQWs蓝光LED
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