中文摘要：

利用四波混频（FWM）技术测试了非掺杂、掺Fe半绝缘InP单晶的光电特性,对载流子的产生、复合和输运等过程进行了研究,分析了深陷阱在载流子的产生与输运中的作用,并给予了解释。利用光栅衰减动力学得到在不同激发水平下非平衡自由载流子的扩散系数和复合时间。通过分析衍射效率和激发能量之间的相互关系,测定了缺陷的电学特性,即它们在光照下的传输和对载流子传输的贡献。这种技术可以通过测量时间和空间上的载流子分布,进而利用光学技术测试半导体材料的光电特性。

英文摘要：

The photoelectric characteristics of un-doped and Fe-doped InP crystals were measured by time resolved degenerative four-wave mixing technique.The processes of the carrier generation,recombination and transport were studied.The role of deep traps in carrier generation and transport were analyzed and explained.The diffusion and recombination time of nonequilibrium free carriers were detained in different simulate levels by grating attenuation dynamics.The defects were measured through analyzing the relationship between diffraction efficiency and excitation energy.By monitoring temporal and spatial carrier distribution,this technique provides an access to photoelectrical processes of semiconductor materials by optical means.