采用气源分子束外延技术生长了GaAs/A1GaAs束缚态向连续态跃迁的太赫兹量子级联激光器材料,基于半绝缘等离子体波导工艺制作了太赫兹量子级联激光器.测量了激光器的发射光谱和功率.电流一电压关系曲线,研究了器件的激光特性.器件激射频率约2.95THz,脉冲模式下,最高工作温度为67K.连续波模式下,闽值电流密度最低为230A/cm2,最大光输出功率1.2mW,最高工作温度为30K.
The material of GaAs/AlGaAs bound-to-continuum terahertz quantum-cascade laser (THz QCL) was grown by gas source molec-ular beam epitaxy. A THz QCL device was fabricated with semi-insulating surface-plasmon waveguide. Its spectrum and light intensity-current-voltage characteristics were studied. The device emits about 2.95 THz, and yields a maximum temperature of 67 K in pulse mode. In continuous-wave mode, it displays a threshold current density of 230 A/cm2 at 9 K with maximum emitted power of 1.2 mW and lases up to 30 K.